Short-channel robustness from negative capacitance in 2D NC-FETs

To date, the robustness of performance, including tolerance to channel-length scaling effects, in scaled transistors has become increasingly important. Negative capacitance (NC) field-effect (FETs) have drawn considerable attention and many studies revealed that NC effect is beneficial for device scaling. However, there a lack experimental evidence short-channel behavior NC-FETs with two-dimensional (2D) semiconducting channels theoretical are limited. Here, we experimentally study 2D MoS2-based using MoS2 CMOS-compatible hafnium zirconium oxide (HfZrO2 or HZO) as ferroelectric (FE) demonstrate remarkable compared similar FETs. It was observed subthreshold switching improvement becomes significant at shorter channel lengths, down 20 nm. From analysis capacitive network, show impacted by larger magnitude polarization ferroelectric, which enhances gate control